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PZTM1101 Datasheet(PDF) 3 Page - NXP Semiconductors |
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PZTM1101 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 7 page  1996 May 09 3 Philips Semiconductors Product specification NPN transistor/Schottky-diode module PZTM1101 ELECTRICAL CHARACTERISTICS Tamb =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT NPN transistor V(BR)CBO collector-base breakdown voltage open emitter; IC =10 µA; IE =0; Tamb = −55 to +150 °C; note 1 60 − V V(BR)CES collector-emitter breakdown voltage open base; IC = 1 mA; VBE =0; Tamb = −55 to +150 °C; note 1 40 − V V(BR)EBO emitter-base breakdown voltage open collector; IE =10 µA; IC =0; Tamb = −55 to +150 °C; note 1 6 − V ICES collector-emitter cut-off current VCE =20V; VBE =0 − 100 nA VCE =20V; VBE = 0; Tamb = −55 to +150 °C − 50 µA IEBO emitter-base cut-off current VEB =6V; IC =0 − 50 nA VEB =6V; IC = 0; Tamb = −55 to +150 °C − 10 µA VCEsat collector-emitter saturation voltage note 1 IC = 10 mA; IB =1mA − 200 mV IC = 50 mA; IB = 3.2 mA − 300 mV VCEsat collector-emitter saturation voltage Tamb = −55 to +150 °C; note 1 IC = 10 mA; IB =1mA − 250 mV IC = 50 mA; IB = 3.2 mA − 350 mV VBEsat base-emitter saturation voltage note 1 IC = 10 mA; IB =1mA − 850 mV IC = 50 mA; IB =5mA − 950 mV VBEsat base-emitter saturation voltage Tamb = −55 to +150 °C; note 1 IC = 10 mA; IB =1mA − 1000 mV IC = 50 mA; IB =5mA − 1100 mV Cob output capacitance IE =ie = 0; VCB =5V; f=1MHz − 4pF Cib input capacitance IC =ic = 0; VEB = 0.5 V; f = 1 MHz − 8pF fT transition frequency IC = 10 mA; VCE = 20 V; f = 100 MHz 300 − MHz hFE DC current gain VCE = 1 V; note 1 IC = 0.1 mA 40 − IC = 1 mA 70 − IC = 10 mA 100 300 IC = 100 mA 30 − hFE DC current gain VCE =1V; Tamb = −55 to +150 °C; note 1 IC = 10 mA 60 500 IC = 100 mA 15 − SWITCHING TIMES (see Figs 2 and 3) td delay time VCC =5V 1 5 ns tr rise time IC = 50 mA 1631ns ts storage time Vi = 0 to 5 V 110 310 ns tf fall time 70 100 ns |
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