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BAS16J Datasheet(PDF) 1 Page - NXP Semiconductors |
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BAS16J Datasheet(HTML) 1 Page - NXP Semiconductors |
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1 / 10 page ![]() 1. Product profile 1.1 General description Single high-speed switching diode, encapsulated in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features 1.3 Applications 1.4 Quick reference data [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. BAS16J Single high-speed switching diode Rev. 01 — 8 March 2007 Product data sheet I High switching speed: trr ≤ 4ns I Low capacitance: Cd ≤ 1.5 pF I Low leakage current I Reverse voltage: VR ≤ 100 V I Repetitive peak reverse voltage: VRRM ≤ 100 V I Very small and flat lead SMD plastic package I Excellent coplanarity and improved thermal behavior I High-speed switching I Voltage clamping I General-purpose switching I Reverse polarity protection Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF forward current [1] - - 250 mA IR reverse current VR = 75 V --1 µA VR reverse voltage - - 100 V trr reverse recovery time [2] --4 ns |
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Similar Description - BAS16J |
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