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IRG4BC40WL Datasheet(PDF) 1 Page - International Rectifier |
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IRG4BC40WL Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C Continuous Collector Current 40 IC @ TC = 100°C Continuous Collector Current 20 A ICM Pulsed Collector Current 160 ILM Clamped Inductive Load Current 160 VGE Gate-to-Emitter Voltage ± 20 V EARV Reverse Voltage Avalanche Energy 160 mJ PD @ TC = 25°C Maximum Power Dissipation 160 PD @ TC = 100°C Maximum Power Dissipation 65 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) °C INSULATED GATE BIPOLAR TRANSISTOR PD - 95861 E C G n-channel Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) Of particular benefit to single-ended converters and boost PFC topologies 150W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) Benefits VCES = 600V VCE(on) typ. = 2.05V @VGE = 15V, IC = 20A Absolute Maximum Ratings W 4/19/04 www.irf.com 1 D2Pak IRG4BC40WS TO-262 IRG4BC40WL IRG4BC40WS IRG4BC40WL Parameter Typ. Max. Units RθJC Junction-to-Case 0.77 RθCS Case-to-Sink, Flat, Greased Surface 0.5 °C/W RθJA Junction-to-Ambient (PCB Mounted steady-state) 40 Wt Weight 2.0 (0.07) g (oz) Thermal Resistance |
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Similar Description - IRG4BC40WL |
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