Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information

1/

SFF24N50 __ __ __

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TX = TX Level

TXV = TXV Level

S = S Level

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3/

__ = Straight Leads

DB = Down Bend

UB = Up Bend

Z = TO-254Z

SFF24N50M

SFF24N50Z

24 AMP / 500 Volts

0.2

Ω

N-Channel MOSFET

Features:

• Rugged Construction with Polysilicon Gate Cell

• Excellent High Temperature Stability

• Very Fast Switching Speed

• Fast Recovery and Superior dV/dt Performance

• Increased Reverse Energy Capability

• Low Input and Transfer Capacitance for Easy Paralleling

• Ceramic Seals for Improved Hermeticity

• Hermetically Sealed Surface Mount Power Package

• TX, TXV, Space Level Screening Available

• Replacement for IXTH24N50 Types

Maximum Ratings

Symbol

Value

Units

Drain – Source Voltage

500

Volts

Gate – Source Voltage

±20

Volts

Continuous Collector Current

24

Amps

Avalanche Current

Repetitive

21

Amps

Avalanche Energy

Repetitive

Single Pulse

1

690

mJ

Power Dissipation

150

114

W

Operating & Storage Temperature

Top & Tstg

-55 to +150

ºC

Maximum Thermal Resistance

Junction to Case

0.83

ºC/W

TO-254 (M)

TO-254Z (Z)

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00165F

DOC