Zero Gate Voltage Drain Current

IDSS

VDS=60V,VGS=0V

-

-

1

A

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250 A

1.2

1.8

2.2

V

VGS=10V, ID=20A

-

10

13

m

Drain-Source On-State Resistance

RDS(ON)

VGS=4.5V, ID=20A

-

13

17

m

Forward Transconductance

gFS

VDS=5V,ID=9A

25

-

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

-

2180

-

PF

Output Capacitance

Coss

-

350

-

PF

Reverse Transfer Capacitance

Crss

VDS=30V,VGS=0V,

F=1.0MHz

-

270

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

-

8.5

-

nS

Turn-on Rise Time

tr

-

6

-

nS

Turn-Off Delay Time

td(off)

-

30

-

nS

Turn-Off Fall Time

tf

VDD=30V, RL=1

VGS=10V,RGEN=3

-

5

-

nS

Total Gate Charge

Qg

-

58

-

nC

Gate-Source Charge

Qgs

-

8

-

nC

Gate-Drain Charge

Qgd

VDS=30V,ID=20A,

VGS=10V

-

17

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=20A

-

-

1.2

V

Diode Forward Current

(Note 2)

IS

-

-

45

A

Reverse Recovery Time

trr

-

30

-

nS

Reverse Recovery Charge

Qrr

TJ = 25°C, IF=20A

di/dt = 100A/ s

(Note3)

-

44

-

nC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t

10 sec.

3. Pulse Test: Pulse Width

300 s, Duty Cycle

2%.

4. Guaranteed by design, not subject to production