NCE100ED65VT4 datasheet(2/8 Pages) NCEPOWER

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Wuxi NCE Power Co., Ltd

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NCE100ED65VT4

http://www.ncepower.com

Thermal Characteristic

Symbol

Parameter

Value

Units

RθJC

Thermal Resistance, Junction to case for IGBT

0.24

°C/W

RθJC

Thermal Resistance, Junction to case for Diode

0.28

°C/W

RθJA

Thermal Resistance, Junction to Ambient

°C/W

Electrical Characteristics (TC=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Value

Units

Min.

Typ.

Max.

Static Characteristics

V(BR)CES

Collector-Emitter Breakdown Voltage

VGE=0V,ICE=1mA

650

ICES

Collector-Emitter Leakage Current

VGE=0V,VCE=650V

IGES(F)

Gate to Emitter Forward Leakage

VGE=+30V,VCE=0V

100

IGES(R)

Gate to Emitter Reverse Leakage

VGE=-30V,VCE =0V

100

VCE(sat)

Collector-Emitter Saturation Voltage

IC=50A

VGE=15V

Tj=25°C

1.15

Tj=175°C

1.25

IC=100A

VGE=15V

Tj=25°C

1.45

1.80

Tj=175°C

1.75

VGE(th)

Gate Threshold Voltage

IC=1mA,VCE=VGE

4.0

5.5

Dynamic Characteristics

Cies

Input Capacitance

VCE=25V,VGE=0V,

f=1MHz

5300

6400

7500

Coes

Output Capacitance

206

Cres

Reverse Transfer Capacitance

Total Gate Charge

VCC=480V, IC=100A,

VGE=15V

197

Qge

Gate to Emitter Charge

Qgc

Gate to Collector Charge

102

Internal Gate Resistance

f=1MHz

1.0

Switching Characteristics

td(ON)

Turn-on Delay Time

VCC=400V,IC=100A,

VGE=0/15V, Rg=6.5Ω,

Inductive Load

Rise Time

td(OFF)

Turn-Off Delay Time

261

Fall Time

Eon

Turn-On Switching Loss

3.9

Eoff

Turn-Off Switching Loss

1.4

Ets

Total Switching Loss

5.3

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