1 of 8
Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
1
2
3
6
5
4
RF1
GND
RF2
VRF1
RFC
VRF2
RF1200
SPDT SWITCH
The RF1200 is a single-pole double-throw (SPDT) high power switch spe-
cially designed to handle GSM power applications. The RF1200 features
low insertion loss, low control voltage, high linearity, and very good har-
monic characteristics. It is fabricated with 0.5
μm GaAs pHEMT process,
and is packaged in a very compact 2mmx2mm, 6-pin, leadless QFN pack-
age.
Features
Low Insertion Loss 0.3dB at
1GHz
High Isolation 26dB at 1GHz
Low Control Voltage 2.6V to
5.0V
Harmonics H2:
-80dBc@1GHz
GaAs pHEMT Process
Applications
Cellular Handset Applications
Antenna Tuning Applications
Multi-Mode GSM, W-CDMA
Applications
IEEE802.11b/g WLAN Appli-
cations
GSM/GPRS/EDGE Switch
Applications
Cellular Infrastructure Appli-
cations
RF1200SPDT Switch
RF1200
SPDT Switch
RF1200PCBA-410
Fully Assembled Evaluation Board
Rev A1 DS070517
RoHS Compliant & Pb-Free Product
Package Style: QFN, 6-pin, 2x2
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
