Electrical characteristics (Ta=25

unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

STATIC CHARACTERISTICS

Drain-source breakdown voltage

V (BR)DSS

VGS = 0V, ID =250μA

30

V

Zero gate voltage drain current

IDSS

VDS =24V,VGS = 0V

1

μA

Gate-body leakage current

IGSS

VGS =±12V, VDS = 0V

100

nA

Gate threshold voltage (note 3)

VGS(th)

VDS =VGS, ID =250μA

0.6

1

1.4

V

VGS =10V, ID =4A

45

55

mŸ

VGS =4.5V, ID =3A

55

70

mŸ

Drain-source on-resistance (note 3)

RDS(on)

VGS =2.5V, ID =2A

83

110

mŸ

Forward transconductance (note 3)

gFS

VDS =15V, ID =4A

8

S

Diode forward voltage (note 3)

VSD

IS=1A, VGS = 0V

0.8

1

V

DYNAMIC CHARACTERISTICS (note 4)

Input capacitance

Ciss

390

pF

Output capacitance

Coss

54.5

pF

Reverse transfer capacitance

Crss

VDS =15V,VGS =0V,f =1MHz

41

Pf

Gate resistance

Rg

VDS =0V,VGS =0V,f =1MHz

3

Ÿ

SWITCHING CHARACTERISTICS (note 4)

Turn-on delay time

td(on)

3.3

ns

Turn-on rise time

tr

1

ns

Turn-off delay time

td(off)

21.7

ns

Turn-off fall time

tf

VGS=10V,VDS=15V,

RL=3.75 ,RGEN=6

2.1

ns

Total gate charge

Qg

4.34

nC

Gate-source Charge

Qgs

0.6

nC

Gate-drain Charge

Qgd

VDS =15V,VGS =4.5V,ID =4A

1.38

nC

Body diode reverse recovery time

t.

1.2

ns

Body diode reverse recovery charge

Qrr

IF=4A,dI/dt=100A/μs

6.3

nC

Notes :

1. Repetitive rating : Pulse width limited by junction temperature.

2. Surface mounted on FR4 board , t”10s.

3. Pulse Test : Pulse Width”80μs, Duty Cycle”0.5%.

4. Guaranteed by design, not subject to producting.