NXP Semiconductors

AFSC5G26F38

Airfast Power Amplifier Module

Rev. 3 — 14 June 2024

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Product data sheet

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AFSC5G26F38

E 2024 NXP B.V. All rights reserved.

9.2 Functional tests

Table 8. Functional Tests — 2496 MHz (1)

(In NXP Doherty Production ATE (2) Test Fixture, TA = 25°C unless otherwise noted, 50 ohm system) VDD = 30 Vdc, IDQ1A = 12 mA,

IDQ2A = 48 mA, VGS1B = (Vt – 0.350) Vdc, VGS2B = (Vt – 0.400) Vdc, Pout = 7 W Avg., 1−tone CW, f = 2496 MHz.

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

G

33.3

35.1

37.3

dB

Drain Efficiency

ηD

40.0

45.1

—

%

Pout @ 3 dB Compression Point

(Pulsed CW, 5% Duty Cycle)

P3dB

46.0

47.1

—

dBm

Table 9. Functional Tests — 2690 MHz (1)

(In NXP Doherty Production ATE (2) Test Fixture, TA = 25°C unless otherwise noted, 50 ohm system) VDD = 30 Vdc, IDQ1A = 12 mA,

IDQ2A = 48 mA, VGS1B = (Vt – 0.350) Vdc, VGS2B = (Vt – 0.400) Vdc, Pout = 7 W Avg., 1−tone CW, f = 2690 MHz.

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

G

30.9

33.8

36.7

dB

Drain Efficiency

ηD

40.0

44.9

—

%

Pout @ 3 dB Compression Point

(Pulsed CW, 5% Duty Cycle)

P3dB

45.6

46.5

—

dBm

9.3 Wideband ruggedness

Table 10. Wideband Ruggedness (3)

(In NXP Doherty Power Amplifier Module Reference Circuit, TA = 25°C unless otherwise noted, 50 ohm system) IDQ1A = 12 mA,

IDQ2A = 48 mA, VGSP1 = 1.51 Vdc, VGSP2 = 1.35 Vdc, f = 2600 MHz, Additive White Gaussian Noise (AWGN) with 10 dB PAR

Characteristic

Test Results

ISBW of 400 MHz at 30 Vdc, 3 dB Input Overdrive from 7 W Avg.

Modulated Output Power

No Device Degradation

1. Part input and output matched to 50 ohms.

2. ATE is a socketed test environment.

3. All data measured in fixture with device soldered in NXP reference circuit.

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