Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

SSR30C __

__ __

│

│

│

│

│

│

│

│

TX = TX Level

TXV = TXV

S = S Level

│

│

S1 = SMD1

100 = 1000 V

120 = 1200 V

SMD1

SSR30C100S1

&

SSR30C120S1

30 A / 1200 V

Schottky Silicon Carbide

Rectifier

FEATURES:

• 1200 Volt Silicon Carbide Schottky Rectifier

• Average Output Current 30 Amps

• No Reverse Recovery

• No Forward Recovery

• No Switching Time Change Over

Temperature

• Small Package Size

• TX, TXV, and Space Level Screening

Symbol

Value

Units

Peak Repetitive and Peak Reverse Voltage

SSR30C100S1

SSR30C120S1

1000

1200

Volts

Average Rectified Forward Current

4/

(Resistive Load, 60 Hz, Sine Wave)

Total

30

Amps

Peak Surge Current

4/

Total

120

Amps

Operating & Storage Temperature

-55 to +250

Junction Temperature

-55 to +250

Maximum Thermal Resistance

4/

(Junction to Case)

Total

0.8

NOTES:

1/ For Ordering Information, Price, and Availability Contact Factory.

2/ Screened to MIL-PRF-19500.

3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC

4/ Terminal Pads 1 & 3 Must be connected together for testing and at the Board Level.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: SH0043B

DOC