Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

FEATURES:

• BVCER and BVCEO to 1000 volts

• Low Saturation Voltage

• Low Leakage at High Temperature

• High Gain, Low Saturation

• 200° C Operating, Gold Eutectic Die Attach

• 2N5010 thru 2N5012 Also Available, Contact Factory

• TX, TXV, and S-Level Screening Available

2N5013 thru 2N5015

0.5 AMP

800 – 1000 Volts

NPN Transistor

Maximum Ratings

Symbol

Value

Units

Collector – Emitter Voltage (RBE = 1K

Ω)

2N5013

2N5014

2N5015

800

900

1000

V

Collector – Base Voltage

2N5013

2N5014

2N5015

800

900

1000

V

Emitter – Base Voltage

5

V

Peak Collector Current

0.5

A

Peak Base Current

50

mA

Total Device Dissipation @ TC = 100º C

Derate above 100º C

2.0

20

W

mW/ºC

Operating and Storage Temperature

Tj, Tstg

-65 to +200

ºC

Thermal Resistance, Junction to Case

50

ºC/W

CASE OUTLINE: TO-5

PIN 1: EMITTER

PIN 2: BASE

PIN 3: COLLECTOR

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TR0043A

DOC