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F7210 Datasheet(PDF) 2 Page - International Rectifier |
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F7210 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 7 page  IRF7210 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -14 ––– ––– V VGS = 0V, ID = -5.0mA V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.011 ––– V/°C Reference to 25°C, ID = -1mA ––– .005 .007 VGS = -4.5V, ID = -16A .007 .010 VGS = -2.5V, ID = -12A VGS(th) Gate Threshold Voltage -0.6 ––– ––– V VDS = VGS, ID = -500µA gfs Forward Transconductance 16 ––– ––– S VDS = -10V, ID = -16A ––– ––– -10 VDS = -12V, VGS = 0V ––– ––– -1.0 VDS = -9.6V, VGS = 0V ––– ––– -100 VDS = -12V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– 212 ––– ID = -10A Qgs Gate-to-Source Charge ––– 27 ––– nC VDS = -10V Qgd Gate-to-Drain ("Miller") Charge ––– 52 ––– VGS = -5.0V td(on) Turn-On Delay Time ––– 50 ––– ns VDD = -10V tr Rise Time ––– 3.0 ––– ID = -10A td(off) Turn-Off Delay Time ––– 6.5 ––– RD = 1.0Ω tf Fall Time ––– 30 ––– RG = 6.2Ω Ciss Input Capacitance ––– 17179 ––– VGS = 0V Coss Output Capacitance ––– 9455 ––– pF VDS = -10V Crss Reverse Transfer Capacitance ––– 8986 ––– ƒ = 1.0kHz Repetitive rating; pulse width limited by max. junction temperature. Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V trr Reverse Recovery Time ––– 165 247 ns TJ = 25°C, IF = -2.5A Qrr Reverse RecoveryCharge ––– 296 444 nC di/dt = 85A/µs Source-Drain Ratings and Characteristics -100 -2.5 A When mounted on 1 inch square copper board, t<10 sec Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA µs S D G |
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