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SST26VF032B-104I/SM Datasheet(PDF) 26 Page - Microchip Technology

Part # SST26VF032B-104I/SM
Description  2.5V/3.0V 32-Mbit Serial Quad I/O™ (SQI™) Flash Memory
PDF  82 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

SST26VF032B-104I/SM Datasheet(HTML) 26 Page - Microchip Technology

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SST26VF032B/SST26VF032BA
DS20005218K-page 26
 2013-2022 Microchip Technology Inc. and its subsidiaries
5.18
Block Erase
The Block Erase instruction clears all bits in the
selected block to ‘1’. Block sizes can be 8-Kbyte,
32-Kbyte or 64-Kbyte depending on address, see
Figure 3-1, Memory Map, for details. A Block Erase
instruction applied to a protected memory area will be
ignored. Prior to any write operation, execute the WREN
instruction. Keep CE# active-low for the duration of any
command sequence.
To execute a Block Erase operation, the host drives
CE# low then sends the Block Erase command cycle
(D8H), three address cycles, then drives CE# high.
Address bits AMS-A13 determine the block address
(BAX); the remaining address bits can be VIL or VIH. For
32-Kbyte blocks, A14:A13 can be VIL or VIH; for
64-Kbyte blocks, A15:A13 can be VIL or VIH. Poll the
BUSY bit in the STATUS register, or wait TBE, for the
completion of the internal, self-timed, Block Erase
operation. See Figure 5-21 and Figure 5-22 for the
Block Erase sequence.
FIGURE 5-21:
BLOCK-ERASE SEQUENCE (SQI)
FIGURE 5-22:
BLOCK-ERASE SEQUENCE (SPI)
Note:
MSN = Most Significant Nibble, LSN = Least Significant Nibble C[1:0] = D8H
MODE 3
0
1
SCK
SIO[3:0]
CE#
C1 C0
MODE 0
2
A5 A4
MSN LSN
4
A3 A2
6
A1 A0
CE#
SO
SI
SCK
ADDR
01 2 3 4 5 6 7 8
ADDR
ADDR
D8
High-Impedance
15 16
23 24
31
MODE 0
MODE 3
MSB
MSB



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