LTZ1000/LTZ1000A

2

1000afb

ELECTRICAL CHARACTERISTICS

INFORMATION

ABSOLUTE MAXIMUM RATINGS

Heater to Substrate ...................................................35V

Collector Emitter Breakdown Q1 ...............................15V

Collector Emitter Breakdown Q2 ...............................35V

Emitter Base Reverse Bias ..........................................2V

Substrate Forward Bias............................................0.1V

(Note 1)

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

Zener Voltage

7.0

6.9

7.2

7.15

7.5

7.45

V

V

Zener Change with Current

80

240

mV

Zener Leakage Current

20

200

µA

Zener Noise

1.2

2

Heater Resistance

200

300

420

Heater Breakdown Voltage

35

V

Transistor Q1 Breakdown

15

20

V

Transistor Q2 Breakdown

35

50

V

Q1, Q2 Current Gain

80

200

450

Thermal Resistance

LTZ1000

Time = 5 Minutes

LTZ1000A

Time = 5 Minutes

80

400

°C/W

°C/W

Long Term Stability

T = 65°C

2

µV√kHr

BOTTOM VIEW

H8 PACKAGE

TO-5 METAL CAN

1

7V

Q1

Q2

3

5

4

8

7

62

ORDER PART NUMBER

PART MARKING

LTZ1000ACH

LTZ1000CH

Order Options

Lead Free: Add #PBF

Lead Free Part Marking: http://www.linear.com/leadfree/

Consult LTC Marketing for parts specified with wider operating temperature ranges.

(Note 2)

Note 2: All testing is done at 25°C. Pulse testing is used for LTZ1000A to

minimize temperature rise during testing. LTZ1000 and LTZ1000A devices

are QA tested at –55°C and 125°C.