TO-252 datasheet(3/19 Pages) AITSEMI

3 / 19 page

AiT Semiconductor Inc.

AM12NS10H

www.ait-ic.com

MOSFET

100V, N-CHANNEL SGT MOSFET

REV1.1

- JAN 2023 RELEASED, APR 2024 UPDATED -

- 3 -

THERMAL CHARACTERISTICS

Parameter

Symbol

Max

Units

Thermal resistance, Junction-Ambient

TO-220F

RθJA

4.5

℃/W

TO-252, TO-251

PDFN8(5x6)

TO-220, TO-263-2

62.5

SOP8

Thermal resistance, Junction-Case

TO-252, TO-251

PDFN8(5x6)

RθJC

2.24

℃/W

TO-220, TO-263-2

1.80

ELECTRICAL CHARACTERISTICS

At TC = 25°C, unless otherwise specified

Parameter

Symbol

Conditions

Min

Typ.

Max Units

OFF Characteristics

Drain-Source Breakdown

Voltage

VDSS

VGS=0V, ID=250μA,

100

110

Drain-Source Leakage

Current

IDSS

VDS=100V, VGS=0V,

μA

VDS=80V, VGS=0V,

@ TC=125℃

100

μA

Gate-Source Forward

Leakage

IGSS(F)

VGS=+20V

100

Gate-Source Reverse

Leakage

IGSS(R) VGS=-20V

-100

ON Characteristics

Drain-Source On-Resistance

RDS(ON)

VGS=10V,

ID=20A.

TO-220F, TO-251,

TO-252, TO-220,

TO-263-2,

PDFN8(5x6)

10.5

mΩ

VGS=10V,

ID=10A.

SOP8

Gate Threshold Voltage

VGS (th) VDS= VGS, ID=250μA

Pulse width tp≤300μs,δ≤2%

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