FTCO3V455A1

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2

ABSOLUTE MAXIMUM RATINGS (TJ = 25_C, Unless Otherwise Specified)

Symbol

Parameter

Rating

Unit

VDS(Q1~Q6)

Drain to Source Voltage

40

V

VGS(Q1~Q6)

Gate to Source Voltage

±20

V

ID(Q1~Q6)

Drain Current Continuous (TC = 25_C, VGS = 10 V)

150

A

EAS(Q1~Q6)

Single Pulse Avalanche Energy (Note 1)

947

mJ

PD

Power Dissipation

115

W

TJ

Maximum Junction Temperature

175

_C

TSTG

Storage Temperature

125

_C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE

Symbol

Parameter

Min.

Typ.

Max.

Unit

Rthjc

Thermal Resistance

Junction to case,

Single Inverter FET,

chip center

(Note 2)

Q1 Thermal Resistance J −C

−

0.8

1.1

_C/W

Q2 Thermal Resistance J −C

−

0.8

1.1

_C/W

Q3 Thermal Resistance J −C

−

0.8

1.1

_C/W

Q4 Thermal Resistance J −C

−

0.8

1.1

_C/W

Q5 Thermal Resistance J −C

−

0.8

1.1

_C/W

Q6 Thermal Resistance J −C

−

0.8

1.1

_C/W

TJ

Maximum Junction Temperature

−

175

_C

TS

Operating Sink Temperature

−40

120

_C

TSTG

Storage Temperature

−40

125

_C

1. Starting TJ = 25_C, VDS = 20 V, IAS = 64 A, L = 480 mH.

2. These values are based on Thermal simulations and PV level measurements.

These values assume a single MOSFET is on, and the test condition for referenced temperature is “Chip Center”.

This means that the DT is measured between the TJ of each MOSFET and the temperature of the case located immediately under the center

of the chip.