Isolated Diode Array with

HiRel MQ, MX, MV, and SP Screening Options

Microsemi

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

Page 1

Copyright

© 2007

3-27-2007

S C O T TS DALE DIVISION

6509A

DESCRIPTION

APPEARANCE

These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated

by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering

diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to

the positive side of the power supply line and to ground (see Figure 1). An external

TVS diode may be added between the positive supply line and ground to prevent over-

voltage on the supply rail. They may also be used in fast switching core-driver

applications. This includes computers and peripheral equipment such as magnetic

cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding

applications. These arrays offer many advantages of integrated circuits such as high-

density packaging and improved reliability. This is a result of fewer pick and place

operations, smaller footprint, smaller weight, and elimination of various discrete

packages that may not be as user friendly in PC board mounting.

14-PIN Ceramic DIP

FEATURES

APPLICATIONS / BENEFITS

•

Hermetic Ceramic Package

•

Isolated Diodes To Eliminate Cross-Talk Voltages

•

•

•

Low Capacitance C < 8.0 pF

•

Options for screening in accordance with MIL-PRF-

19500/474 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or SP prefixes

respectively to part numbers. For example, designate

MX6509A for a JANTX screen.

•

High Frequency Data Lines

•

RS-232 & RS-422 Interface Networks

•

Ethernet: 10 Base T

•

Computer I/O Ports

•

LAN

•

Switching Core Drivers

•

IEC 61000-4 Compatible (see circuit in figure 1)

61000-4-2 ESD: Air 15 kV, contact 8 kW

61000-4-4 (EFT): 40 A – 5/50 ns

61000-4-5 (surge): 12 A 8/20

μs

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Reverse Breakdown Voltage of 60 Vdc (Note 1 & 2)

•

Continuous Forward Current of 300 mA dc (Note 1 & 3)

•

Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)

•

400 mW Power Dissipation per Junction @ 25

•

600 mW Power Dissipation per Package @ 25

•

Operating Junction Temperature range –65 to +150

•

Storage Temperature range of –65 to +150

•

14-PIN Ceramic DIP

•

Weight 2.05 grams (approximate)

•

Marking: Logo, part number, date code

•

Pin #1 to the left of the indent on top of package

•

Carrier tubes; 25 pcs (standard)

NOTE 1: Each Diode

NOTE 3: Derate at 2.4 mA/

NOTE 4: Derate at 4.8 mW/

MAXIMUM

FORWARD

VOLTAGE

(Note 1)

MAXIMUM

FORWARD

VOLTAGE

(Note 1)

MAXIMUM

REVERSE

CURRENT

MAXIMUM

CAPACITANCE

(PIN TO PIN)

F = 1 MHz

MAXIMUM

FORWARD

RECOVERY TIME

MAXIMUM

REVERSE

RECOVERY TIME

trr

PART

NUMBER

V

V

μA

pF

ns

ns

6509A

1

1.5

0.1

8.0

40

20