DYNAMIC CHARACTERISTICS

APT31N80JC3

Note:

Duty Factor D = t1/t2

Peak TJ = PDM x ZθJC + TC

t1

t2

SINGLE PULSE

1.0

RECTANGULARPULSEDURATION(SECONDS)

FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0

0.5

0.1

0.3

0.7

0.9

0.05

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

6 Eon includes diode reverse recovery. See figures 18, 20.

7 Repetitve avalanche causes additional power losses that can be

calculated as P

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

UNIT

Amps

Volts

ns

µC

V/ns

MIN

TYP

MAX

31

93

1

1.2

855

30

6

Symbol

R

θJC

R

θJA

MIN

TYP

MAX

0.37

62

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

on

E

off

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-off Switching Energy

Turn-off Switching Energy

Test Conditions

V

V

f = 1 MHz

V

V

I

RESISTIVESWITCHING

V

V

I

R

INDUCTIVE SWITCHING @ 25°C

V

I

INDUCTIVE SWITCHING @ 125°C

V

I

MIN

TYP

MAX

4510

2050

110

180

355

22

90

25

15

70

80

69

615

530

1025

580

UNIT

pF

nC

ns

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

THERMALCHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Reverse Recovery Time (I

Reverse Recovery Charge (I