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IRGP30B60KD Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # IRGP30B60KD
Description  NPT IGBT
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRGP30B60KD Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISG2105
eq IRGP30B60KD
NPT IGBT
www.iscsemi.com
1
DESCRIPTION
· Low Diode VF
· 10µs Short Circuit Capability
· Ultrasoft Diode Reverse Recovery Characteristics
APPLICATIONS
· Low EMI
· Rugged Transient Performance
· Benchmark Efficiency for Motor Control
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
600
V
VGES
Gate-Emitter Voltage
±
30
V
IC
Collector Current-Continuous
@ TC=25℃
60
A
IC
Collector Current-Continuous
@ TC=100℃
30
A
ICM
Pulsed Collector Current
120
A
IF
Diode Forward Current @ TC=100℃
30
A
IFM
Diode Maximum Forward Current
120
A
PD
Power Dissipation @TC=25℃
304
W
PD
Power Dissipation @TC=100℃
122
W
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
IGBT
0.41
℃
/W
Rth j-c
Thermal Resistance,Junction to Case
diode
1.32
℃
/W


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