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APT100GF60JU2 Datasheet(PDF) 2 Page - Microsemi Corporation

Part # APT100GF60JU2
Description  Boost chopper NPT IGBT
PDF  9 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT100GF60JU2 Datasheet(HTML) 2 Page - Microsemi Corporation

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APT100GF60JU2
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 100µA
600
V
Tj = 25°C
100
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
1000
µA
Tj = 25°C
2.0
2.5
VCE(sat)
Collector Emitter saturation Voltage
VGE =15V
IC = 100A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 1mA
3
5
V
IGES
Gate – Emitter Leakage Current
VGE = ±20V, VCE = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
4300
Coes
Output Capacitance
470
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
400
pF
Qg
Total gate Charge
330
Qge
Gate – Emitter Charge
290
Qgc
Gate – Collector Charge
VGS = 15V
VBus = 300V
IC = 100A
200
nC
Td(on)
Turn-on Delay Time
26
Tr
Rise Time
25
Td(off)
Turn-off Delay Time
150
Tf
Fall Time
30
ns
Eon
Turn-on Switching Energy
3.35
Eoff
Turn off Switching Energy
Resistive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 100A
RG = 5Ω
2.85
mJ
Td(on)
Turn-on Delay Time
26
Tr
Rise Time
25
Td(off)
Turn-off Delay Time
170
Tf
Fall Time
40
ns
Eon
Turn-on Switching Energy
4.3
Eoff
Turn-off Switching Energy
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 100A
RG = 5Ω
3.5
mJ



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