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APTC80DDA15T3G Datasheet(PDF) 2 Page - Microsemi Corporation

Part # APTC80DDA15T3G
Description  Dual Boost chopper Super Junction MOSFET Power Module
PDF  6 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTC80DDA15T3G Datasheet(HTML) 2 Page - Microsemi Corporation

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APTC80DDA15T3G
www.microsemi.com
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 800V
Tj = 25°C
50
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 800V
Tj = 125°C
375
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 14A
150
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
4507
Coss
Output Capacitance
2092
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
108
pF
Qg
Total gate Charge
180
Qgs
Gate – Source Charge
22
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 28A
90
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
13
Td(off)
Turn-off Delay Time
83
Tf
Fall Time
Inductive switching @125°C
VGS = 15V
VBus = 533V
ID = 28A
RG = 2.5Ω
35
ns
Eon
Turn-on Switching Energy
486
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 533V
ID = 28A, RG = 2.5Ω
278
µJ
Eon
Turn-on Switching Energy
850
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 533V
ID = 28A, RG = 2.5Ω
342
µJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1000
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=1000V
Tj = 125°C
500
µA
IF
DC Forward Current
Tc = 100°C
60
A
IF = 60A
1.9
2.5
IF = 120A
2.2
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
1.7
V
Tj = 25°C
280
trr
Reverse Recovery Time
Tj = 125°C
350
ns
Tj = 25°C
760
Qrr
Reverse Recovery Charge
IF = 60A
VR = 667V
di/dt=200A/µs
Tj = 125°C
3600
nC



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