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GF1J Datasheet(PDF) 2 Page - ON Semiconductor |
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GF1J Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 5 page ![]() GF1A − GF1M www.onsemi.com 2 ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Units 1A 1B 1D 1G 1J 1K 1M VRRM Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V IF(AV) Average Rectified Forward Current, @ TL = 125°C 1.0 A IFSM Non−repetitive Peak Forward Surge Current 8.3 ms Single Half−Sine−Wave 30 A Tstg Storage Temperature Range −65 to +175 °C TJ Operating Junction Temperature Range −65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Value Units PD Power Dissipation 1.8 W RθJA Thermal Resistance, Junction−to−Ambient* 80 °C/W RqJL Thermal Resistance, Junction−to−Lead* 26 °C/W *Device mounted on PCB with 0.2 x 0.2 ″ (5.0 x 5.0 mm) copper pad areas. ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted Symbol Parameter Device Units 1A 1B 1D 1G 1J 1K 1M VF Maximum Forward Voltage @ 1.0 A 1.0 1.2 V trr Maximum Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 2.0 ms IR Maximum Reverse Current @ Rated VR TA = 25°C TA = 125°C 5.0 50 mA CT Typical Capacitance VR = 4.0 V, f = 1.0 MHz 15 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Quantity† GF1A GF1A SMA 7500 / Tape & Reel GF1B GF1B GF1D GF1D GF1G GF1G GF1J GF1J GF1K GF1K GF1M GF1M †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. |
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