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APTGT100DH170G Datasheet(PDF) 2 Page - Microsemi Corporation

Part # APTGT100DH170G
Description  Asymmetrical - Bridge Trench Field Stop IGBT Power Module
PDF  5 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGT100DH170G Datasheet(HTML) 2 Page - Microsemi Corporation

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APTGT100DH170G
www.microsemi.com
2 - 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1700V
350
µA
Tj = 25°C
2.0
2.4
VCE(sat)
Collector Emitter Saturation Voltage
VGE = 15V
IC = 100A
Tj = 125°C
2.4
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 2mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
500
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
9
Coes
Output Capacitance
0.36
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
0.3
nF
Td(on)
Turn-on Delay Time
370
Tr
Rise Time
40
Td(off)
Turn-off Delay Time
650
Tf
Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 900V
IC = 100A
RG = 4.7 Ω
180
ns
Td(on)
Turn-on Delay Time
400
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
800
Tf
Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 900V
IC = 100A
RG = 4.7 Ω
300
ns
Eon
Turn-on Switching Energy
Tj = 125°C
32
Eoff
Turn-off Switching Energy
VGE = 15V
VBus = 900V
IC = 100A
RG = 4.7 Ω
Tj = 125°C
31
mJ
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1700
V
Tj = 25°C
350
IRM
Maximum Reverse Leakage Current
VR=1700V
Tj = 125°C
600
µA
IF
DC Forward Current
Tc = 80°C
100
A
Tj = 25°C
1.8
2.2
VF
Diode Forward Voltage
IF = 100A
Tj = 125°C
1.9
V
Tj = 25°C
385
trr
Reverse Recovery Time
Tj = 125°C
490
ns
Tj = 25°C
28
Qrr
Reverse Recovery Charge
Tj = 125°C
46
µC
Tj = 25°C
12
Er
Reverse Recovery Energy
IF = 100A
VR = 900V
di/dt =1600A/µs
Tj = 125°C
24
mJ



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