APTGT150DA60TG datasheet(2/5 Pages) MICROSEMI

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APTGT150DA60TG

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

ICES

Zero Gate Voltage Collector Current

VGE = 0V, VCE = 600V

250

µA

Tj = 25°C

1.5

1.9

VCE(sat)

Collector Emitter Saturation Voltage

VGE =15V

IC = 150A

Tj = 150°C

1.7

VGE(th)

Gate Threshold Voltage

VGE = VCE, IC = 1.5 mA

5.0

5.8

6.5

IGES

Gate – Emitter Leakage Current

VGE = 20V, VCE = 0V

400

Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Cies

Input Capacitance

9200

Coes

Output Capacitance

580

Cres

Reverse Transfer Capacitance

VGE = 0V

VCE = 25V

f = 1MHz

270

Td(on)

Turn-on Delay Time

115

Rise Time

Td(off)

Turn-off Delay Time

225

Fall Time

Inductive Switching (25°C)

VGE = ±15V

VBus = 300V

IC = 150A

RG = 3.3Ω

Td(on)

Turn-on Delay Time

130

Rise Time

Td(off)

Turn-off Delay Time

300

Fall Time

Inductive Switching (150°C)

VGE = ±15V

VBus = 300V

IC = 150A

RG = 3.3Ω

Tj = 25°C

0.85

Eon

Turn on Energy

Tj = 150°C

1.5

Tj = 25°C

4.1

Eoff

Turn off Energy

VGE = ±15V

VBus = 300V

IC = 150A

RG = 3.3Ω

Tj = 150°C

5.3

Chopper diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

VRRM

Maximum Peak Repetitive Reverse Voltage

600

Tj = 25°C

250

IRM

Maximum Reverse Leakage Current

VR=600V

Tj = 150°C

500

µA

DC Forward Current

Tc = 80°C

150

Tj = 25°C

1.6

Diode Forward Voltage

IF = 150A

VGE = 0V

Tj = 150°C

1.5

Tj = 25°C

130

trr

Reverse Recovery Time

Tj = 150°C

225

Tj = 25°C

6.9

Qrr

Reverse Recovery Charge

Tj = 150°C

14.5

µC

Tj = 25°C

1.6

Reverse Recovery Energy

IF = 150A

VR = 300V

di/dt =3000A/µs

Tj = 150°C

3.5

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