APTGT300DA120G

www.microsemi.com

5 - 5

Forward Characteristic of diode

0

100

200

300

400

500

600

0

0.4

0.8

1.2

1.6

2

2.4

V

Hard

switching

ZCS

ZVS

0

10

20

30

40

50

60

0

50 100 150 200 250 300 350 400

I

D=50%

Tc=75°C

Operating Frequency vs Collector Current

maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.04

0.08

0.12

0.16

0.2

0.00001

0.0001

0.001

0.01

0.1

1

10

rectangular Pulse Duration (Seconds)

Diode

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