APTGT600DA60G datasheet(2/5 Pages) MICROSEMI

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APTGT600DA60G

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

ICES

Zero Gate Voltage Collector Current

VGE = 0V, VCE = 600V

750

µA

Tj = 25°C

1.4

1.8

VCE(sat)

Collector Emitter Saturation Voltage

VGE =15V

IC = 600A

Tj = 150°C

1.5

VGE(th)

Gate Threshold Voltage

VGE = VCE, IC = 2mA

5.0

5.8

6.5

IGES

Gate – Emitter Leakage Current

VGE = 20V, VCE = 0V

800

Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Cies

Input Capacitance

Coes

Output Capacitance

3.1

Cres

Reverse Transfer Capacitance

VGE = 0V

VCE = 25V

f = 1MHz

1.5

Td(on)

Turn-on Delay Time

130

Rise Time

Td(off)

Turn-off Delay Time

250

Fall Time

Inductive Switching (25°C)

VGE = ±15V

VBus = 300V

IC = 600A

RG = 2Ω

Td(on)

Turn-on Delay Time

145

Rise Time

Td(off)

Turn-off Delay Time

320

Fall Time

Inductive Switching (150°C)

VGE = ±15V

VBus = 300V

IC = 600A

RG = 2Ω

Tj = 25°C

Eon

Turn on Energy

Tj = 150°C

5.5

Tj = 25°C

Eoff

Turn off Energy

VGE = ±15V

VBus = 300V

IC = 600A

RG = 2Ω

Tj = 150°C

Chopper diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

VRRM

Maximum Peak Repetitive Reverse Voltage

600

Tj = 25°C

350

IRM

Maximum Reverse Leakage Current

VR=600V

Tj = 150°C

550

µA

DC Forward Current

Tc = 80°C

600

Tj = 25°C

1.5

1.9

Diode Forward Voltage

IF = 600A

VGE = 0V

Tj = 150°C

1.4

Tj = 25°C

120

trr

Reverse Recovery Time

Tj = 150°C

210

Tj = 25°C

Qrr

Reverse Recovery Charge

Tj = 150°C

µC

Tj = 25°C

6.9

Reverse Recovery Energy

IF = 600A

VR = 300V

di/dt =5000A/µs

Tj = 150°C

14.1

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