TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Drain Source Breakdown vs. Junction Temperature

Source Drain Diode Forward Voltage

Threshold Voltage

Safe Operating Area

0.

0.6

9

1.2

1.5

1.8

2.1

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 30 A

V

GS = 4.5 V

V

GS = 10 V

0.

0.000

005

0.010

0.015

0.020

0.025

02468

10

V

GS - Gate-to-Source Voltage (V)

T

J = 150 °C

T

J = 25 °C

60

64

68

72

76

80

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 10 mA

0.

0.001

01

0.1

1

10

100

0.00.20.40.60.81.01.2

V

SD - Source-to-Drain Voltage (V)

T

J = 25 °C

T

J = 150 °C

0.8

0.4

0.0

- 0.4

- 0.8

- 1.2

- 1.6

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Temperature (°C)

I

D = 250 μA

I

D = 5 mA

0.

0.01

1

1

10

100

1000

0.01

0.1

1

10

100

V

DS -Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

Limited by R

DS(on)*

1 ms

I

DM Limited

T

C = 25 °C

Single Pulse

BVDSS Limited

100 μs

10ms

I

D Limited

LB3036-VB

www.VBsemi.com

服务热线：400-655-8788

4