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APTM50DDA10T3G Datasheet(PDF) 2 Page - Microsemi Corporation

Part # APTM50DDA10T3G
Description  Dual Boost chopper MOSFET Power Module
PDF  6 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM50DDA10T3G Datasheet(HTML) 2 Page - Microsemi Corporation

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APTM50DDA10T3G
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 500V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
500
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 18.5A
100
120
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 1mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
4367
Coss
Output Capacitance
894
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
61
pF
Qg
Total gate Charge
96
Qgs
Gate – Source Charge
24
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 37A
49
nC
Td(on)
Turn-on Delay Time
15
Tr
Rise Time
21
Td(off)
Turn-off Delay Time
73
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 37A
RG = 5Ω
52
ns
Eon
Turn-on Switching Energy
566
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 37A, RG = 5Ω
545
µJ
Eon
Turn-on Switching Energy
931
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 37A, RG = 5Ω
635
µJ
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
500
µA
IF
DC Forward Current
Tc = 80°C
40
A
Tj = 25°C
1.45
VF
Diode Forward Voltage
IF = 40A
Tj = 125°C
1.35
V
Tj = 25°C
95
trr
Reverse Recovery Time
Tj = 125°C
115
ns
Tj = 25°C
2.6
Qrr
Reverse Recovery Charge
IF = 40A
VR = 300V
di/dt=2600A/µs
Tj = 125°C
4
µC



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