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APTM100A13SCG Datasheet(PDF) 6 Page - Microsemi Corporation

Part # APTM100A13SCG
Description  Phase leg Series & SiC parallel diodes MOSFET Power Module
PDF  7 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM100A13SCG Datasheet(HTML) 6 Page - Microsemi Corporation

  APTM100A13SCG Datasheet HTML 1Page - Microsemi Corporation APTM100A13SCG Datasheet HTML 2Page - Microsemi Corporation APTM100A13SCG Datasheet HTML 3Page - Microsemi Corporation APTM100A13SCG Datasheet HTML 4Page - Microsemi Corporation APTM100A13SCG Datasheet HTML 5Page - Microsemi Corporation APTM100A13SCG Datasheet HTML 6Page - Microsemi Corporation APTM100A13SCG Datasheet HTML 7Page - Microsemi Corporation  
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APTM100A13SCG
www.microsemi.com
6 – 7
Delay Times vs Current
td(on)
td(off)
0
10
20
30
40
50
60
20
30
40
50
60
70
80
90 100
ID, Drain Current (A)
VDS=667V
RG=0.5Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
10
20
30
40
50
20
30
40
50
60
70
80
90 100
ID, Drain Current (A)
VDS=667V
RG=0.5Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
5
20 30 40 50 60 70 80 90 100
ID, Drain Current (A)
VDS=667V
RG=0.5Ω
TJ=125°C
L=100µH
Eon
Eoff
0
1
2
3
4
01
2345
Gate Resistance (Ohms)
Switching Energy vs Gate Resistance
VDS=667V
ID=65A
TJ=125°C
L=100µH
Hars
switching
ZCS
ZVS
0
100
200
300
400
500
10
20
30
40
50
60
ID, Drain Current (A)
Operating Frequency vs Drain Current
VDS=667V
D=50%
RG=0.5Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.20.4 0.60.8
1
1.2 1.41.6 1.8
VSD, Source to Drain Voltage (V)
Source to Drain Diode Forward Voltage



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