APTM120U10DAG datasheet(2/6 Pages) MICROSEMI

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APTM120U10DAG

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

VGS = 0V,VDS = 1200V

Tj = 25°C

IDSS

Zero Gate Voltage Drain Current

VGS = 0V,VDS = 1000V

Tj = 125°C

RDS(on)

Drain – Source on Resistance

VGS = 10V, ID = 58A

100

120

Ω

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 20mA

IGSS

Gate – Source Leakage Current

VGS = ±30 V, VDS = 0V

±400

Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Ciss

Input Capacitance

28.9

Coss

Output Capacitance

4.4

Crss

Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f = 1MHz

0.8

Total gate Charge

1100

Qgs

Gate – Source Charge

128

Qgd

Gate – Drain Charge

VGS = 10V

VBus = 600V

ID = 116A

716

Td(on)

Turn-on Delay Time

Rise Time

Td(off)

Turn-off Delay Time

245

Fall Time

Inductive switching @ 125°C

VGS = 15V

VBus = 800V

ID = 116A

RG =1.2Ω

Eon

Turn-on Switching Energy

Eoff

Turn-off Switching Energy

Inductive switching @ 25°C

VGS = 15V, VBus = 800V

ID = 116A, RG = 1.2Ω

4.6

Eon

Turn-on Switching Energy

9.2

Eoff

Turn-off Switching Energy

Inductive switching @ 125°C

VGS = 15V, VBus = 800V

ID = 116A, RG = 1.2Ω

5.6

Series diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

VRRM

Maximum Repetitive Reverse Voltage

1200

Tj = 25°C

1500

IRM

Maximum Reverse Leakage Current

VR=1200V

Tj = 125°C

2500

µA

DC Forward Current

Tc = 70°C

180

IF = 180A

2.5

IF = 360A

2.3

Diode Forward Voltage

IF = 180A

Tj = 125°C

1.8

Tj = 25°C

370

trr

Reverse Recovery Time

Tj = 125°C

500

Tj = 25°C

3.9

Qrr

Reverse Recovery Charge

IF = 180A

VR = 800V

di/dt = 800A/µs

Tj = 125°C

20.7

µC

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