Electrical Characteristics (TJ=25℃ unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

On/Off States

Drain-Source Breakdown Voltage

VGS=0V ID=-

250μA

-40

V

Zero Gate Voltage Drain Current

VDS=-40V, VGS=0V TJ=25℃

-1

μA

VDS=-40V, VGS=0V TJ=125℃

-100

μA

Gate-Body Leakage Current

VGS=±20V, VDS=0V

±100

nA

Gate Threshold Voltage

VDS=VGS, ID=-25

0μA

-1

-2.5

V

Forward Transconductance

VDS=-10V, ID=-20A

51

S

Drain-Source On-State Resistance

VGS=-10V, ID=-20A TJ=25℃

3.1

4

mΩ

Drain-Source On-State Resistance

VGS=-4.5V, ID=-20A TJ=25℃

4

5.3

mΩ

Dynamic Characteristics

Ciss

Input Capacitance

VDS=-20V,VGS=0V,

f=1.0MHz

10733

pF

Coss

Output Capacitance

770

pF

Crss

Reverse Transfer Capacitance

697

pF

Rg

Gate resistance

VGS=0V, VDS=0V, f=1.0MHz

1.7

Ω

Switching Parameters

td(on)

Turn-on Delay Time

VGS=-10V, VDS=-20V,

RL=1

Ω, RGEN=3Ω

19.6

nS

tr

Turn-on Rise Time

3.6

nS

td(off)

Turn-Off Delay Time

22.8

nS

tf

Turn-Off Fall Time

38

nS

Qg

Total Gate Charge

VGS=-10V, VDS=-20V, ID=-20A

195

nC

Qgs

Gate-Source Charge

24.1

nC

Qgd

Gate-Drain Charge

39.9

nC

Source-Drain Diode Characteristics

ISD

Source-Drain Current (Body Diode)

-137

A

VSD

Forward on Voltage (Note 3)

VGS=0V, IS=-20A

-1.2

V

trr

Reverse Recovery Time

IF=-20A, dI/dt=-100A/

s

36.6

ns

Qrr

Reverse Recovery Charge

IF=-20A, dI/dt=-100A/

s

34.8

nC

Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature.

Notes 2.EAS condition: TJ=25℃,VDD=-40V,VG=-10V, Rg

=25Ω, L=0.5mH.

Notes 3.Repetitive Rating: Pulse width limited by maximum junction temperature.

BVDSS

IDSS

IGSS

VGS(th)

gFS

RDS(ON)

RDS(ON)

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