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DFB25100 Datasheet(PDF) 2 Page - ON Semiconductor |
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DFB25100 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 5 page ![]() DFB2505, DFB2510, DFB2520, DFB2540, DFB2560, DFB2580, DFB25100 www.onsemi.com 2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise specified) (Note 2) Symbol Parameter Value Unit DFB2505 DFB2510 DFB2520 DFB2540 DFB2560 DFB2580 DFB25100 VRRM Maximum Recurrent Peak Reverse Voltage 50 100 200 400 600 800 1000 V VRMS Maximum RMS Voltage 35 70 140 280 420 560 700 V VDC Maximum DC Blocking Voltage 50 100 200 400 600 800 1000 V I(AV) Maximum Average Forward Rectified Current 25 A IFSM Peak Forward Surge Current (8.3 ms Single Half−wave) 350 A RqJC Typical Thermal Resistance (Note 3) 4.75 °C/W TJ Operating Temperature Range −55 to +150 °C TSTG Storage Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Single−phase, half−wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 3. Device mounted on 4 inch x 6 inch x 0.25 inch Al−plate heat sink. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Value Unit VF Maximum Forward Voltage 12.5 A 1.0 V Instantaneous Forward Voltage 25 A 1.1 IR Maximum DC Reverse Current at Rated DC Blocking Voltage TA = 25°C 10 mA TA = 125°C 500 I2t Rating for Fusing (t < 8.3 ms) 508 A2s CJ Typical Junction Capacitance per Leg (Note 4) 110 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Measured at 1 MHz and applied reverse bias of 4.0 V DC. |
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