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MMF80R1K2QZTH Datasheet(PDF) 2 Page - MagnaChip Semiconductor. |
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MMF80R1K2QZTH Datasheet(HTML) 2 Page - MagnaChip Semiconductor. |
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2 / 10 page  MMF80R1K2QZ Datasheet Jun. 2023. Revision 1.3 Magnachip Semiconductor Ltd. 2 Parameter Symbol Rating Unit Note Drain – Source voltage VDSS 800 V Gate – Source voltage VGSS ± 20 V Continuous drain current(1) ID 4.5 A TC=25 oC 2.85 A TC=100 oC Pulsed drain current(2) IDM 13.5 A Power dissipation PD 22 W Single - pulse avalanche energy EAS 170 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness(3) dv/dt 15 V/ns Storage temperature Tstg - 55 ~150 oC Maximum operating junction temperature Tj 150 oC 1) ID limited by maximum junction temperature 2) Pulse width tP limited by Tj,max 3) ISD ≤ ID, VDS peak ≤ V(BR)DSS Parameter Symbol Value Unit Thermal resistance, junction-case max Rthjc 5.7 oC /W Thermal resistance, junction-ambient max Rthja 75 oC /W Thermal Characteristics Absolute Maximum Rating (Tc=25 oC unless otherwise specified) |
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