MS2211

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DESCRIPTION

::

The MS2211 is a silicon NPN bipolar device designed

For specialized avionics applications, including JTIDS, utilizing pulse

formats with short pulse widths and high burst rates or overall duty

cycles.

The MS2211 is housed in a hermetic package and utilizes internal

input impedance matching. Gold metallization and emitter ballasting

assures high reliability under operating conditions.

BSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

≤≤ 75°°C)

25

W

Device Current*

0.9

A

Collector-Supply Voltage

32

V

Junction Temperature (Pulsed RF Operation)

+250

°°C

Storage Temperature

-65 to +200

°°C

Thermal Data

Thermal Data

Junction-case Thermal Resistance*

7.0

°°C/W

* Applies only to rated RF amplifier operation

Features

• 960-1215 MHz

• COMMON BASE

• GOLD METALLIZATION

• POUT = 6 W MIN. WITH 9.3 dB GAIN

• 5:1 VSWR CAPABILITY

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855