Microsemi – PPG reserves the right to change, without notice, the specifications and information

GENERAL DESCRIPTION

The MS2473 is a high power COMMON BASE bipolar transistor. It is

designed for pulsed systems in the 1090MHz frequency band. The device has

gold thin-film metallization for proven highest MTTF. Low thermal resistance

packaging reduces the junction temperature and extends device lifetime.

CASE OUTLINE

M112

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25

2300 Watts

Maximum Voltage and Current

BVcbo

Collector to Base Voltage

65 Volts

BVebo

Emitter to Base Voltage

3.5 Volts

Ic

Collector Current

46 Amps

Maximum Temperatures

Storage Temperature

- 65 to + 150

Operating Junction Temperature

+ 200

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Pout

Pin

Pg

Power Out

Power Input = 150W

Power Gain

Collector Efficiency

Input Return Loss

F = 1090 MHz

Vcc = 50 Volts

PW = 10

µsec

DF = 1%

F = 1090 MHz

600

6.0

35

10

150

Watts

Watts

dB

%

dB

BVebo

BVcbo

Ices

Emitter to Base Breakdown

Collector to Base Breakdown

Collector to Emitter Leakage

DC - Current Gain

Thermal Resistance

Ie = 10 mA

Ic = 25 mA

Vce = 50V

Vce = 5V, Ic = 1A

3.5

65

5

0.06

35

200

Volts

Volts

mA

C/W

Note 1: At rated output power and pulse conditions

2: At rated pulse conditions

Initial , January 2007

MS2473

600 Watts, 50 Volts, Pulsed

Avionics 1090 MHz