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TSCDF08065G1 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # TSCDF08065G1
Description  8A, 650V SiC Merged PIN Schottky Diode
PDF  6 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSCDF08065G1 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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TSCDF08065G1
Taiwan Semiconductor
1
Version: A2404
8A, 650V SiC Merged PIN Schottky Diode
FEATURES
● Max junction temperature 175°C
● MPS structure for high ruggedness to forward current
surge events
● High-speed switching possible
● High forward surge capability
● High-frequency operation
● Positive temperature coefficient on VF
● RoHS compliant
● Halogen-free
APPLICATIONS
● General purpose
● Switch mode power supplies
● Power factor correction
MECHANICAL DATA
● Case: ITO-220AC-2L
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Polarity: As circuit diagram
● Weight: 1.65g (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF
8
A
VRRM
650
V
IFSM
72
A
TJ MAX
175
°C
Package
ITO-220AC-2L
Configuration
Single die
ITO-220AC-2L
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Repetitive peak reverse voltage
VRRM
650
V
Reverse voltage, total rms value
VR(RMS)
455
V
Continuous Rectified Forward Current @ TJ = 147°C
IF
8
A
Surge peak forward current 10ms single half
sine-wave superimposed on rated load
TC = 25°C
IFSM
72
A
TC = 125°C
60
A
Junction temperature
TJ
-55 to +175
°C
Storage temperature
TSTG
-55 to +175
°C


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