STB28N60M2 datasheet(1/21 Pages) STMICROELECTRONICS

Part #	STB28N60M2

Description	N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in D²PAK, I²PAK, TO-220 and TO-247

PDF	21 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 21 page

March 2017

DocID025254 Rev 4

1/21

This is information on a product in full production.

www.st.com

STB28N60M2, STI28N60M2,

STP28N60M2, STW28N60M2

N-

channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2

Power MOSFETs in D²PAK, I²PAK, TO-220 and TO-247

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS @ TJmax

RDS(on) max.

ID

STB28N60M2

650 V

0.150

Ω

22 A

STI28N60M2

STP28N60M2

STW28N60M2



Extremely low gate charge



Excellent output capacitance (COSS) profile



100% avalanche tested



Zener-protected

Applications



Switching applications



LCC converters, resonant converters

Description

These devices are N-channel Power MOSFETs

developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical

structure, these devices exhibit low on-resistance

and optimized switching characteristics,

rendering them suitable for the most demanding

high efficiency converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STB28N60M2

28N60M2

D²PAK

Tape and reel

STI28N60M2

I²PAK

Tube

STP28N60M2

TO-220

STW28N60M2

TO-247

TAB

1

D

(

)

(2

)

G

S 3

(

)

AM15572V1

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