Absolute Maximum Ratings

Description

03/16/01

www.irf.com

1

AUTOMOTIVE MOSFET

PD-94152

IRLL024NQ

Parameter

Max.

Units

3.1

2.6

A

Pulsed Drain Current

Q

12

Power Dissipation

S

1.3

W

Linear Derating Factor

8.3

mW/°C

Gate-to-Source Voltage

±16

V

Single Pulse Avalanche Energy

T

87

mJ

Avalanche Current

Q

See Fig.16c, 16d, 19, 20

A

Repetitive Avalanche Energy

V

mJ

dv/dt

Peak Diode Recovery dv/dt

U

9.9

V/ns

Junction and Storage Temperature Range

-55 to + 175

°C

SOT-223

q

Advanced Process Technology

q

Ultra Low On-Resistance

q

175°C Operating Temperature

q

Repetitive Avalanche Allowed up to Tjmax

q

Dynamic dv/dt Rating

q

Automotive [Q101] Qualified

Benefits

Typical Applications

q

Electronic Fuel Injection

q

Active Suspension

q

Power Doors, Windows & Seats

q

Cruise Control

q

Air Bags

S

D

G

Parameter

Typ.

Max.

Units

Junction-to-Amb. (PCB Mount, steady state)*

90

120

Junction-to-Amb. (PCB Mount, steady state)**

50

60

Thermal Resistance

°C/W

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

in a SOT-223 package utilizes the lastest processing techniques to achieve

extremely low on-resistance per silicon area. Additional features of this Automotive

qualified HEXFET Power MOSFET are a 175°C junction operating temperature,

fast switching speed and improved repetitive avalanche rating. These benefits

combine to make this design an extremely efficient and reliable device for use in

Automotive applications and a wide variety of other applications.

The efficient SOT-223 package is designed for surface mount and the enlarged tab

provides improved thermal characteristics making it ideal in a variety of power

applications. Power dissipation of 1.0W is possible in a typical surface mount

application. Available in Tape & Reel.