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MCP3001-I/MS Datasheet(PDF) 2 Page - Microchip Technology |
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MCP3001-I/MS Datasheet(HTML) 2 Page - Microchip Technology |
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2 / 28 page ![]() MCP3001 DS21293C-page 2 © 2007 Microchip Technology Inc. 1.0 ELECTRICAL CHARACTERISTICS 1.1 Maximum Ratings* V DD......................................................................... 7.0V All inputs and outputs w.r.t. V SS ...... -0.6V to VDD +0.6V Storage temperature ..........................-65°C to +150°C Ambient temp. with power applied .....-65°C to +125°C ESD protection on all pins (HBM)........................ > 4kV *Notice: Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maxi- mum rating conditions for extended periods may affect device reliability. PIN FUNCTION TABLE ELECTRICAL CHARACTERISTICS Name Function V DD +2.7V to 5.5V Power Supply V SS Ground IN+ Positive Analog Input IN- Negative Analog Input CLK Serial Clock D OUT Serial Data Out CS/SHDN Chip Select/Shutdown Input V REF Reference Voltage Input All parameters apply at V DD = 5V, VSS = 0V, VREF = 5V, TAMB = -40°C to +85 °C, fSAMPLE = 200 ksps and fCLK = 14*fSAMPLE, unless otherwise noted. Typical values apply for V DD = 5V, TAMB =25 °C, unless otherwise noted. Parameter Sym Min Typ Max Units Conditions Conversion Rate: Conversion Time tCONV — — 10 clock cycles Analog Input Sample Time tSAMPLE 1.5 clock cycles Throughput Rate fSAMPLE — — 200 75 ksps ksps V DD = VREF = 5V V DD = VREF = 2.7V DC Accuracy: Resolution 10 bits Integral Nonlinearity INL — ±0.5 ±1 LSB Differential Nonlinearity DNL — ±0.25 ±1 LSB No missing codes over tem- perature Offset Error — — ±1.5 LSB Gain Error — — ±1 LSB Dynamic Performance: Total Harmonic Distortion THD — -76 — dB V IN = 0.1V to 4.9V@1 kHz Signal to Noise and Distortion (SINAD) SINAD — 61 — dB V IN = 0.1V to 4.9V@1 kHz Spurious Free Dynamic Range SFDR — 80 — dB V IN = 0.1V to 4.9V@1 kHz Reference Input: Voltage Range V REF 0.25 — V DD V Note 2 Current Drain I REF —90 0.001 150 3 µA µA CS = V DD = 5V Note 1: This parameter is guaranteed by characterization and not 100% tested. 2: See graph that relates linearity performance to V REF level. 3: Because the sample cap will eventually lose charge, clock rates below 10 kHz can affect linearity perfor- mance, especially at elevated temperatures. |
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