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US1NDFQ Datasheet(PDF) 3 Page - Diodes Incorporated |
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US1NDFQ Datasheet(HTML) 3 Page - Diodes Incorporated |
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3 / 5 page ![]() US1NDFQ Document number: DS45965 Rev. 2 - 2 3 of 5 www.diodes.com January 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. US1NDFQ Notes: 10. Rise time = 7.0ns max. Input impedance = 1.0M Ω, 22pF. 11. Rise time = 10ns max. Input impedance = 50 Ω. 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 0 200 400 600 800 1000 1200 VR, REVERSE VOLTAGE (V) 25℃ 85℃ 125℃ 150℃ 100℃ Figure 4. Typical Reverse Characteristics -55℃ 1 10 100 0 20 40 60 80 100 VR, REVERSE VOLTAGE (V) f = 1MHz Figure 5. Typical Total Capacitance 0 10 20 30 40 1 10 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Forward Surge Current Derating Curve I AVERAGE FORWARD CURRENT (A) F(AV) Figure 6 Forward Power Dissipation 0 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0.8 1 1.2 T = 150°C J Note 8 Figure 7. Reverse Recovery Time Characteristic and Test Circuit Figure 3. Forward Surge Current Derating Curve Note 6 (Note 10) (Note 11) |
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