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STM32F101V8 Datasheet(PDF) 36 Page - STMicroelectronics |
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STM32F101V8 Datasheet(HTML) 36 Page - STMicroelectronics |
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36 / 64 page ![]() Electrical characteristics STM32F101xx 36/64 5.3.7 Internal Clock source characteristics The parameters given in Table 19 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 7. High-speed internal (HSI) RC oscillator LSI Low Speed Internal RC Oscillator Table 19. HSI oscillator characteristics(1)(2) 1. VDD = 3.3 V, TA = −40 to 85 °C unless otherwise specified. 2. TBD stands for to be determined. Symbol Parameter Conditions Min Typ Max(3) 3. Values based on device characterization, not tested in production. Unit fHSI Frequency 8 MHz ACCHSI Accuracy of HSI oscillator TA = –40 to 85 °C TBD ±3TBD % at TA = 25 °C TBD ±1TBD % tsu(HSI) HSI oscillator startup time 1 2 µs IDD(HSI) HSI oscillator power consumption 80 100 µA Table 20. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = −40 to 85 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max(2) 2. Value based on device characterization, not tested in production. Unit fLSI Frequency 30 60 kHz tsu(LSI) LSI oscillator start up time 85 µs IDD(LSI) LSI oscillator power consumption 0.65 1.2 µA |
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