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MMP25R210RZTH Datasheet(PDF) 2 Page - MagnaChip Semiconductor. |
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MMP25R210RZTH Datasheet(HTML) 2 Page - MagnaChip Semiconductor. |
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2 / 10 page ![]() MMP25R210RZ Datasheet Aug. 2024 Revision 1.2 Magnachip Semiconductor Ltd. Parameter Symbol Rating Unit Note Drain - source voltage VDSS 250 V Gate - source voltage VGSS ± 25 V Continuous drain current (1) ID 13.8 A TC=25℃ 8.7 A TC=100℃ Pulsed drain current (2) IDM 41.4 A Power dissipation PD 100 W Single - pulse avalanche energy (3) EAS 350 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness (4) ISD 15 V/ns Storage temperature dv/dt -55 ~150 oC Maximum operating junction temperature Tstg 150 oC 1) ID limited by maximum junction temperature 2) Pulse width tP limited by Tj,max 3) L=18mH, IAS = 6.5A, RG = 25Ω 4) ISD ≤ ID, VDS peak ≤ V(BR)DSS Parameter Symbol Value Unit Thermal resistance, junction-case max RthJC 1.25 oC/W Thermal resistance, junction-ambient max RthJA 62.5 oC/W Thermal Characteristics Absolute Maximum Rating (Tc=25oC unless otherwise specified) |
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