N-Channel Enhancement

Mode Power MOSFET

SIMFSZN2106M1

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Semelab

Telephone:

Fax:

+44 (0) 1455 556565

+44 (0) 1455 552612

Email: sales@semelab-tt.com

Website: http://www.semelab-tt.com

Document Number:

Issue:

Page:

DOC 11604

1

2 of 3

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)

Symbols

Parameters

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS = 0

ID = 1.0mA

60

V

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = 1.0mA

0.8

2.4

V

TC = 125°C

0.25

TC = -55°C

2.84

IGSS

Gate-Source Leakage Current

VGS = ±20V

VDS = 0V

±100

nA

IDSS

Zero Gate Voltage

Drain Current

VDS = 48V

VGS = 0

1.0

μA

TC = 125°C

100

ID(ON)(3)

On-State Drain Current

VDS = 25V

VGS = 10V

0.6

A

RDS(on)

(3)

Static Drain-Source

On-State Resistance

VGS = 5V

ID = 75mA

6

Ω

VGS = 10V

ID = 500mA

4

TC = 125°C

5

gfs

(3)

Forward Transconductance

VDS = 25V

ID = 500mA

150

mƱ

VSD

(3)

Body Diode Forward Voltage

VGS = 0

IS = 600mA

1.8

V

trr

(3)

Body Diode Reverse Recovery

VGS = 0

IS = 600mA

400

ns

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

VGS = 0

53

65

pF

Coss

Output Capacitance

VDS = 25V

29

40

Crss

Reverse Transfer Capacitance

f = 1.0MHz

8.5

15

tr

(4)

Rise Time

VDD = 25V

ID = 600mA

RG = 25Ω

5

ns

td(on)

(4)

Turn - On Delay Time

5

10

tf

(4)

Fall Time

3

td(off)

(4)

Turn-Off Delay Time

8

10