2N80-C

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 9

www.unisonic.com.tw

QW-R205-507.C



ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

800

V

Gate-Source Voltage

VGSS

±30

V

Drain Current

Continuous

ID

2

A

Pulsed (Note 2)

IDM

4

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

102

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

3.3

V/ns

Power Dissipation

TO-220

PD

85

W

TO-220F/TO-220F1

25

W

TO-251/TO-252

44

W

Junction Temperature

TJ

+150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature.

3. L=30mH, IAS=2.6A, VDD=50V, RG=25 Ω, Starting TJ = 25°C

4. ISD≤2.0A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-220F

TO-220F1

θJA

62.5

°C/W

TO-251/TO-252

110

°C/W

Junction to Case

TO-220

θJC

1.47

°C/W

TO-220F/TO-220F1

5

°C/W

TO-251/TO-252

2.84 (Note)

°C/W

Note: The data tested by surface mounted on a 1 inch

2 FR-4 board with 2OZ copper.