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PSD 82
0.5
1
1.5
2
0
50
100
150
200
VF [V]
I
F
[A]
Tvj = 150°C
Tvj = 25°C
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0
10
1
10
2
10
3
t[ms]
I
(A)
FSM
TVJ=45°C
TVJ=150°C
750
670
I
------
IFSM
F(OV)
0VRRM
1/2 VRRM
1VRRM
2
4
6
10
TVJ=45°C
TVJ=150°C
t [ms]
1
10
10
10
2
3
4
As
2
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode IFSM: Crest value. t:
duration
Fig. 3
òi
2dt versus time
(1-10ms) per diode (or thyristor)
80
60
40
20
0
50
100
150
200
250
300
95
100
105
110
115
120
125
130
135
140
145
150
TC
°C
DC
sin.180°
rec.120°
rec.60°
rec.30°
1.82
0.82
0.48
0.32
0.23 0.15
= RTHCA [K/W]
IFAVM
[A]
Tamb
[K]
0
50
100
150
[W]
PVTOT
PSD 82
Fig. 4 Power dissipation versus direct output current and ambient
temperature
50
100
150
200
0
20
40
60
80
100
DC
sin.180°
rec.120°
rec.60°
rec.30°
T (°C)
C
I
dAV
[A]
Fig.5 Maximum forward current
at case temperature
0.01
0.1
1
10
0.5
1
1.5
2
K/W
Zth
t[s]
Z thJK
Z thJC
Fig. 6 Transient thermal impedance per diode (or Thyristor),
calculated
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