TC9401 datasheet(3/24 Pages) MICROCHIP

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DS21483C-page 3

TC9400/9401/9402

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings*

VDD – VSS ...........................................................+18V

IIN ....................................................................... 10 mA

VOUTMAX – VOUT Common...................................... 23V

VREF – VSS ..........................................................-1.5V

Storage Temperature Range .............. -65°C to +150°C

Operating Temperature Range:

C Device ........................................... 0°C to +70°C

E Device......................................... -40°C to +85°C

Package Dissipation (TA ≤ 70°C):

8-Pin CerDIP ............................................. 800 mW

8-Pin Plastic DIP ....................................... 730 mW

8-Pin SOIC ................................................ 470 mW

*Stresses

above

those

listed

under

“Absolute

Maximum Ratings” may cause permanent damage to

the device. These are stress ratings only and functional

operation of the device at these or any other conditions

above those indicated in the operation sections of the

specifications is not implied. Exposure to Absolute

Maximum Rating conditions for extended periods may

affect device reliability.

TABLE 1-1:

TC940X ELECTRICAL SPECIFICATIONS

Electrical Characteristics: VDD = +5V, VSS = -5V, VGND = 0V, VREF = -5V, RBIAS = 100 kΩ, Full Scale = 10 kHz, unless otherwise

specified. TA = +25°C, unless temperature range is specified (-40°C to +85°C for E device, 0°C to +70°C for C device).

Parameter

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

Units

Test Conditions

Voltage-to-Frequency

Accuracy

TC9400

TC9401

TC9402

Linearity 10 kHz

—

0.01

0.05

—

0.004

0.01

—

0.05

0.25

Full Scale

Output Deviation from

Straight Line Between

Normalized Zero and

Full Scale Input

Linearity 100 kHz

—

0.1

0.25

—

0.04

0.08

—

0.25

0.5

Full Scale

Output Deviation from

Straight Line Between

Normalized Zero Read-

ing and Full Scale Input

Gain Temperature

Drift (Note 1)

—

±25

±40

—

±25

±40

—

±50

±100

ppm/°C

Full Scale

Variation in Gain A due

to Temperature Change

Gain Variance

—

±10

—

±10

—

±10

—

% of

Nominal

Variation from Ideal

Accuracy

Zero Offset

(Note 2)

—

±10

±50

—

±10

±50

—

±20

±100

Correction at Zero

Adjust for Zero Output

when Input is Zero

Zero Temperature

Drift (Note 1)

—

±25

±50

—

±25

±50

—

±50

±100

μV/°C

Variation in Zero Offset

Due to Temperature

Change

Note

Full temperature range; not tested.

IIN = 0.

3: Full temperature range, IOUT = 10 mA.

4: IOUT = 10 μA.

5: Threshold Detect = 5V, Amp Out = 0V, full temperature range.

6: 10 Hz to 100 kHz; not tested.

7: 5

μsec minimum positive pulse width and 0.5μsec minimum negative pulse width.

8: tR = tF = 20nsec.

9: RL ≥ 2 kΩ, tested @ 10 kΩ.

10: Full temperature range, VIN = -0.1V.

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