MCP6141 datasheet(3/34 Pages) MICROCHIP

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DS21668B-page 3

MCP6141/2/3/4

AC ELECTRICAL CHARACTERISTICS

MCP6143 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS

FIGURE 1-1:

Chip Select (CS) Timing

Diagram (MCP6143 only).

Electrical Characteristics: Unless otherwise indicated, VDD = +1.4V to +5.5V, VSS = GND, TA = 25°C, VCM =VDD/2,

VOUT ≈ VDD/2, RL = 1 MΩ to VDD/2, and CL =60 pF.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

AC Response

Gain Bandwidth Product

GBWP

—

100

—

kHz

Slew Rate

—

V/ms

Phase Margin

—

G = +10

Noise

Input Voltage Noise

Eni

—5.0

—

μV

P-P

f = 0.1 Hz to 10 Hz

Input Voltage Noise Density

eni

—

170

—

nV/

√Hz f = 1 kHz

Input Current Noise Density

ini

—0.6

—

fA/

√Hz f = 1 kHz

Electrical Characteristics: Unless otherwise indicated, VDD = +1.4V to +5.5V, VSS = GND, TA = 25°C, VCM =VDD/2,

VOUT ≈ VDD/2, RL = 1 MΩ to VDD/2, and CL =60 pF.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

CS Low Specifications

CS Logic Threshold, Low

VIL

VSS

—VSS+0.3

CS Input Current, Low

ICSL

—5

—

CS = VSS

CS High Specifications

CS Logic Threshold, High

VIH

VDD–0.3

—

VDD

CS Input Current, High

ICSH

—5

—

CS = VDD

CS Input High, GND Current

ISS

—-20

—

CS = VDD

Amplifier Output Leakage, CS High

IOLEAK

—20—

CS = VDD

Dynamic Specifications

CS Low to Amplifier Output Turn-on Time

tON

—2

G = +1V/V, CS = 0.3V to

VOUT = 0.9VDD/2

CS High to Amplifier Output High-Z

tOFF

—10—

μsG = +1V/V, CS = V

DD–0.3V to

VOUT = 0.1VDD/2

Hysteresis

VHYST

—0.6

—

VDD = 5.0V

VIL

High-Z

tON

VIH

tOFF

VOUT

-20 pA (typ.)

High-Z

ISS

ICS 5 pA (typ.)

5 pA (typ.)

-20 pA (typ.)

-0.6

μA (typ.)

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