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BAS70-06-HT3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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BAS70-06-HT3 Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 3 page ![]() www.vishay.com 2 Document Number 85689 Rev. 3, 02-Jun-03 VISHAY BAS70-HT3 to BAS70-06-HT3 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Package Dimensions in mm Parameter Test condition Symbol Min Typ. Max Unit Reverse breakdown voltage IR = 10 µA (pulsed) V(BR)R 70 V Leakage current VR = 50 V, tp < 300 µs IR 20 100 nA Forward voltage tp < 300 µs, IF = 1.0 mA VF 410 mV tp < 300 µs, IF = 15 mA VF 1000 mV Capacitance VR = 0 V, f = 1 MHz Ctot 1.5 2 pF Reverse recovery time IF = 10 mA, IR = 10 mA, Irr = 1 mA, RL = 100 Ω trr 5 ns 18057 ISO Method E |
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