TC1121 datasheet(3/14 Pages) MICROCHIP

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DS21358C-page 3

TC1121

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings*

Supply Voltage (VDD) ............................................... 6V

OSC, FC, SHDN Input Voltage ..... -0.3V to (V+ + 0.3V)

Output Short Circuit Duration ........................... 10 Sec.

Package Power Dissipation (TA ≤ 70°C)

8-Pin PDIP .............................................. 730 mW

8-Pin SOIC .............................................. 470 mW

8-Pin MSOP ............................................ 333 mW

Operating Temperature Range

C Suffix............................................ 0°C to +70°C

E Suffix......................................... -40°C to +85°C

Storage Temperature Range .............. -65°C to +150°C

*Stresses

above

those

listed

under

“Absolute

Maximum Ratings” may cause permanent damage to

the device. These are stress ratings only and functional

operation of the device at these or any other conditions

above those indicated in the operation sections of the

specifications is not implied. Exposure to Absolute

Maximum Rating conditions for extended periods may

affect device reliability.

TC1121 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: TA = 0°C to 70°C (C suffix), -40°C to +85°C (E suffix), V

+= 5V ±10% C

OSC = Open, C1, C2 = 10 μF,

FC = V+, SHDN = VIH, typical values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Min

Typ

Max

Units

Test Conditions

IDD

Active Supply Current

—

0.6

100

μA

RL = Open, FC = Open or GND

RL = Open, FC = V

ISHUTDOWN

Shutdown Supply Current

—

0.2

1.0

μASHDN = 0V

V+

Supply Voltage

2.4

—

5.5

VIH

SHDN Input Logic High

VDD x 0.8

—

VIL

SHDN Input Logic Low

—

0.4

IIN

Input Leakage Current

-1

-4

—

μASHDN, OSC

FC pin

ROUT

Output Source Resistance

—

IOUT = 60 mA

IOUT

Output Current

100

VOUT = more negative than -3.75V

FOSC

Oscillator Frequency

100

200

—

kHz

Pin 7 Open, Pin 1 Open or GND

SHDN = VIH, Pin 1 = V

PEFF

Power Efficiency

—

FC = GND for all

RL = 2k between V

+ and V

OUT

RL = 1kΩ between VOUT and GND

IL = 60 mA to GND

VEFF

Voltage Conversion Efficiency

99.9

—

RL = Open

Note

Connecting any input terminal to voltages greater than V+ or less than GND may cause destructive latch-up. It is recommended that no

inputs from sources operating from external supplies be applied prior to “power up” of the TC1121.

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