Specifications T

J = 25ºC, unless otherwise noted

Parameter

Symbol

Test Conditions

Value

Unit

Min.

Typ.

Max.

Static Parameters

Drain-Source Breakdown Voltage

V

(BR)DSS

V

GS = 0V, ID = -250µA

-30

--

--

V

Zero Gate Voltage Drain Current

I

DSS

V

DS = -30V, VGS = 0V

--

--

-1

uA

Gate-Source Leakage

I

GSS

V

GS = ±20V

--

--

±100

nA

Gate-Source Threshold Voltage

V

GS(th)

V

DS = VGS, ID = -250µA

-1

-

3

V

Drain-Source On-Resistance

R

DS(on)

V

GS = -10V, ID = -3A

--

16

m

Ω

V

GS = -4.5V, ID = -2A

--

23

Dynamic Parameters

Input Capacitance

C

iss

V

GS = 0V,

V

DS = -15V,

f = 1.0MHz

--

1253

--

pF

Output Capacitance

C

oss

--

181

--

Reverse Transfer Capacitance

C

rss

--

158

--

Total Gate Charge

Q

g

V

DD = -15V,

I

D = -3A,

V

GS = -10V

--

24.5

--

nC

Gate-Source Charge

Q

gs

--

3

--

Gate-Drain Charge

Q

gd

--

6

--

Turn-on Delay Time

t

d(on)

V

DD = -15V,

I

D = -3A,

R

G = 1Ω

--

8

--

ns

Turn-on Rise Time

t

r

--

9

--

Turn-off Delay Time

t

d(off)

--

26

--

Turn-off Fall Time

t

f

--

8

--

Drain-Source Body Diode Characteristics

Continuous Body Diode Current

I

S

T

C = 25º

C

--

--

-9

A

Body Diode Voltage

V

SD

T

J = 25º

C, I

SD = -3A, VGS = 0V

--

--

-1.2

V

Notes

1.

Repetitive Rating: Pulse width limited by maximum junction temperature

2.

Identical low side and high side switch with identical R

G

3.

V

DD = -30V, RG = 25Ω, L=0.5 mH, Starting TJ = 25°C 。

www.bychip.cn

CEM4435A

v2.0